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PD - 91357C
HEXFET(R) Power MOSFET
l l l l l l
IRLZ24N
VDSS = 55V
Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated
D
G S
RDS(on) = 0.06 ID = 18A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
18 13 72 45 0.30 16 68 11 4.5 5.0 -55 to + 175 300 (1.6mm from case) 10 lbfin (1.1Nm)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Min.

Typ.
0.50
Max.
3.3 62
Units
C/W
07/12/02
IRLZ24N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Min. 55 1.0 8.3
Typ. 0.061 7.1 74 20 29
Max. Units Conditions V V GS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.060 V GS = 10V, ID = 11A 0.075 V GS = 5.0V, ID = 11A 0.105 V GS = 4.0V, ID = 9.0A 2.0 V V DS = V GS, ID = 250A S V DS = 25V, ID = 11A 25 V DS = 55V, VGS = 0V A 250 V DS = 44V, VGS = 0V, TJ = 150C 100 V GS = 16V nA -100 V GS = -16V 15 ID = 11A 3.7 nC V DS = 44V 8.5 V GS = 5.0V, See Fig. 6 and 13 V DD = 28V ID = 11A ns RG = 12, VGS = 5.0V RD = 2.4, See Fig. 10 Between lead, 4.5 6mm (0.25in.) nH from package 7.5 and center of die contact 480 V GS = 0V 130 pF V DS = 25V 61 = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
IS
I SM
VSD t rr Q rr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol 18 showing the A G integral reverse 72 p-n junction diode. 1.3 V TJ = 25C, IS = 11A, VGS = 0V 60 90 ns TJ = 25C, IF = 11A 130 200 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25C, L = 790H RG = 25, IAS = 11A. (See Figure 12)
ISD 11A, di/dt 290A/s, VDD V(BR)DSS, Pulse width 300s; duty cycle 2%.
TJ 175C
IRLZ24N
100
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
100
ID , Drain-to-Source Current (A)
10
ID , Drain-to-Source Current (A)
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
10
2.5V
1
1
2.5V 20s PULSE WIDTH T J = 25C
1 10
0.1 0.1
A
100
0.1 0.1
20s PULSE WIDTH T J = 175C
1 10
A
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
TJ = 25C
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 18A
I D , Drain-to-Source Current (A)
2.5
TJ = 175C
10
2.0
1.5
1
1.0
0.5
0.1 2 3 4 5 6
V DS = 15V 20s PULSE WIDTH
7 8 9 10
A
0.0 -60 -40 -20 0 20 40 60
VGS = 10V
80 100 120 140 160 180
A
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRLZ24N
800
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
600
Ciss
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
15
I D = 11A V DS = 44V V DS = 28V
12
9
400
Coss
6
200
Crss
3
0 1 10 100
A
0 0 4 8
FOR TEST CIRCUIT SEE FIGURE 13
12 16 20
A
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
I D , Drain Current (A)
100 10s
TJ = 175C TJ = 25C
10
10
100s
1 0.4 0.8 1.2 1.6
VGS = 0V
A
1 1
TC = 25C TJ = 175C Single Pulse
10
1ms 10ms
A
100
2.0
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRLZ24N
20
VDS
16
RD
V GS RG
ID, Drain Current (Amps)
D.U.T.
+
-V DD
12
5.0V
Pulse Width 1 s Duty Factor 0.1 %
8
Fig 10a. Switching Time Test Circuit
4
VDS 90%
0 25 50 75 100 125 150
A
175
TC , Case Temperature (C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (ZthJC )
D = 0.50
1
0.20 0.10 0.05 0.02 0.01
0.1
P DM
SINGLE PULSE (THERMAL RESPONSE)
Notes: 1. Duty factor D = t
t
1 t2
1
/t
2
0.01 0.00001
2. Peak TJ = PDM x Z thJC + T C
A
1
0.0001
0.001
0.01
0.1
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRLZ24N
VDS D.U.T. RG + V - DD
5.0 V
EAS , Single Pulse Avalanche Energy (mJ)
L
140
TOP
120
BOTTOM
100
ID 4.5A 7.8A 11A
IAS tp
0.01
80
60
Fig 12a. Unclamped Inductive Test Circuit
40
20
V(BR)DSS tp VDD VDS
0
VDD = 25V
25 50 75 100 125 150
A
175
Starting TJ , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
5.0 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRLZ24N
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
IRLZ24N
Package Outline
TO-220AB Outline Dimensions are shown in millimeters (inches)
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1 2 3
LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN
14.09 (.555) 13.47 (.530)
4.06 (.160) 3.55 (.140)
3X 3X 1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
2.92 (.115) 2.64 (.104)
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220-AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010 WITH ASSEMBLY LOT CODE 9B1M
A
INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE
PART NUMBER IRF1010 9246 9B 1M
DATE CODE (YYWW) YY = YEAR WW = WEEK
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/02

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